Neutral- and multi-colored semitransparent perovskite solar cells. CsPbX 3 quantum dots for lighting and displays: Room-temperature synthesis, photoluminescence superiorities, underlying origins and white light-emitting diodes. Quantum dot light-emitting diodes based on inorganic perovskite cesium lead halides (CsPbX 3). Nonlinear absorption and low-threshold multiphoton pumped stimulated emission from all-inorganic perovskite nanocrystals. High-performance perovskite memristor based on methyl ammonium lead halides. Resistive switching mechanisms of V-doped SrZrO3 memory films. Flexible hybrid organic–inorganic perovskite memory. Control of emission color of high quantum yield CH3NH3PbBr3 perovskite quantum dots by precipitation temperature. All-inorganic colloidal perovskite quantum dots: A new class of lasing materials with favorable characteristics. Bright light-emitting diodes based on organometal halide perovskite. High-performance flexible broadband photodetector based on organolead halide perovskite. High-performance photovoltaic perovskite layers fabricated through intramolecular exchange. Semiconductor layer thickness impact on optical and resistive switching behavior of pulsed laser deposited BaTiO3/ZnO heterostructures. Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO 3:Nb/ZnO heterojunctions. Electro-photo double modulation on the resistive switching behavior and switchable photoelectric effect in BiFeO 3 films. Effect of electrode and interface oxide on the property of ReRAM composed of Pr 0.7Ca 0.3MnO 3. Memory switching in glow discharge polymerized thin films. Bistable electrical switching in polymer thin films. Resistance switching characteristics of solid electrolyte chalcogenide Ag2Se nanoparticles for flexible nonvolatile memory applications. Resistive switching and magnetic modulation in cobalt-doped ZnO. Oxygen migration induced resistive switching effect and its thermal stability in W/TaOx/Pt structure. Real-time identification of the evolution of conducting nano-filaments in TiO 2 thin film ReRAM. Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. Resistive switching in transition metal oxides. Springer: Berlin Heidelberg, 1982 pp 383–392. In The Origins of Digital Computers: Selected Papers Randell, B., Ed. Such multifunctional devices achieved by the combination of information storage and processing abilities have potential applications for future computing that transcends traditional architectures. Additionally, the heterojunction between the CPB and ZnO endows the devices with a light-induced ReS effect of more than 10 3 with a rapid response speed (<1 ms), which enables us to tune the resistance state by changing the light and electric field simultaneously. Such a design can be adapted to various devices. The devices have electric field-induced bipolar resistive switching (ReS) and memory behaviors with a large on/off ratio (>10 5), low working voltage (10 4 s), and high environmental stability, which are achieved via ZnO capping within the devices. Herein, we report for the first time the fabrication of stable and high-performance memristors based on inorganic halide perovskite (CsPbBr 3, CPB). Recently, organometallic halide perovskites were reported to be promising active materials for memristors, although they have poor stability and mediocre performance. Memristors are considered to be next-generation memory devices with all of the aforementioned advantages. The rapid development of information technology has led to an urgent need for devices with fast information storage and processing, a high density, and low energy consumption.